K1050X RF plasma cleaning etching ashing instrument

K1050XRF plasma cleaning etching ashing instrument

K1050XThe RF plasma processing unit consists of a solid-state RF generator combined with a tuning circuit. During plasma processing, the 'automatic tuning' function ensuresRFPower automatically matches impedance with any changes in the system or load. This means maintaining the optimal RF plasma conditions inside the chamber-This is important because it can accelerate reaction time, improve the reproducibility of results, andRFProtect the power supply during the cycle. Equipped with simultaneous monitoring of two types of gas flow needle valves, with full or partial control of ventilation ports. Its chamber is cylindrical, and the sample is loaded into a drawer style pull-out system for easy use.

K1050XThe plasma barrel reactor has been carefully designed to withstand a large amount of use-Every day24Hour by hour processing of certain plasma ashing plans-It has microprocessor control and automatic operation functions, and is durable and easy to operate. Isotropic (in all directions) barrel system plasma etching or plasma ashing is suitable for a wide range of applications.K1050XA significant advantage of using gas discharge generated by low-voltage radio frequency induction to modify sample surfaces or remove sample materials in a soft and controllable manner compared to other methods is that plasma etching and ashing processes are dry (without the need for wet chemicals) and carried out at relatively low temperatures, and the "combustion" products produced can be easily carried away in the airflow through a vacuum system.

The vacuum system is a rotating mechanical pump（K1050X）Alternatively, a membrane pump can be used as a turbomolecular pump for the front stage vacuum（K1050XT）.

This system typically uses a mixture of oxygen and argon gas, with oxygen removing organic matter (hydrocarbons) and argon etching the sample surface.K1050X RFThe plasma barrel reactor is designed for plasma etching, plasma ashing, and plasma cleaning applications. Radio frequency plasma can be used for low-temperature modification of various samples and substrates. Plasma etching is widely used in the semiconductor industry becauseK1050XCan be used with reactive gases (e.gCF 4）Remove the silicon layer and use oxygen to remove photoresist.

Instrument features:

•Compact desktop system, saving space

Solid state RF generator and tuning circuit, fully automatic control, easy to operate

Drawer style structure, equipped with/Easy to unload samples

Two types of processing gases

Low temperature ashing process

Automatically terminate after the ashing process is completed

Recommended application:

• Coal ashing; Microscopic ashing of organic materials (such as epoxy resin, filters, food, etc.)

• SEM&TEMEtching of Organic Samples

• SEM、TEMandSPMSample or sample holderPlasmaCleaning and washing

•Remove photoresist and encapsulation in electronic components, including plasma etching of epitaxial layers

•Surface treatment of plastic products to achieve the transformation from hydrophobic to hydrophilic, improving the paint and ink properties of plastics

•Preparation of asbestos samples, testing of artificial mineral fibers and asbestos

•Pre treatment of bonded samples

•For plasma etching and plasma cleaning applications that require a cleaner vacuum environment, please chooseK1050XT

When plasma etching applications involve the use of oxygen as the process gas, it is strongly recommended to use it for safety reasonsEdwards RV3 FomblinizedOr similar synthetic oil rotary mechanical pumps. Of course, in places where it is necessary to avoid using oil-based rotary mechanical pumps, dry vacuum pumps can also be chosen. Note: This product is exclusively for scientific research purposes.