IGBTIt is an insulated gate bipolar transistor, a new type of composite power electronic device that was born in the early 1980s and rapidly developed in the 1990s. The application range of IGBT is generally in the region of withstand voltage above 600V, current above 10A, and frequency above 1kHz. Given the parameter characteristics of IGBT, it is currently mainly used in industrial control fields such as motors, converters (inverters), frequency converters, UPS, EPS power supplies, and wind power generation equipment. In the above-mentioned application fields, IGBT has gradually become competitive in the medium voltage application field of 600V and above due to its advantages of voltage control, simple driving, high switching frequency, low switching loss, and short-circuit protection. It has gradually replaced GTO and GTR in UPS, switching power supply, tram, and AC motor control.
IGBTCombining the advantages of MOSFET and GTR, it has both high input impedance, fast speed, good thermal stability, voltage driven type, as well as the advantages of reduced on state voltage, high voltage, and high current. Therefore, there are constantly new breakthroughs in IGBT technology and processes; Application frequency: hard switch 5KHz~40KHz, soft switch 40KHz~150KHz; Applications with power ranging from 5000 watts to several hundred kilowatts. IGBT devices will continue to explore new application areas, providing new business opportunities for energy and material conservation, as well as for new energy and industrial automation (high-frequency welding machines, high-frequency ultrasound, inverters, choppers, UPS/EPS, induction heating).
IGBT moduleIt may also fail due to various reasons, and the main reasons for its failure are as follows:
1. Damage caused by holding effect due to exceeding the shutdown safe working area. The holding effect is divided into static holding effect and dynamic holding effect. IGBT adopts a PNPN 4-layer structure. Due to the presence of a parasitic thyristor inside the body, when the collector current increases to a certain extent, the parasitic thyristor can conduct, causing the gate to lose control and form a self-locking phenomenon, which is called the static holding effect. After the IGBT experiences a holding effect, the collector current increases, resulting in excessive power consumption and device failure. 2. Overheating can easily damage the collector, and the main cause of instantaneous overheating caused by excessive current is continuous overheating due to poor heat dissipation, which can damage the IGBT. If the device continues to short circuit, the power consumption generated by high current will cause temperature rise. Due to the small thermal capacity of the chip, its temperature will rapidly rise. If the chip temperature exceeds the intrinsic temperature of silicon, the device will lose its blocking ability, and the gate control will be unable to protect it, resulting in IGBT failure. In practical applications, the maximum allowable working temperature is generally around 125 ℃.
3. Overvoltage causes breakdown of the collector and emitter, or breakdown of the gate and emitter.
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