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E-mail
1316056746@qq.com
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Phone
15010040708
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Address
398 Zhongdong Road, Chaoyang District, Beijing
Beijing Jingcheng Hongtai Technology Co., Ltd
1316056746@qq.com
15010040708
398 Zhongdong Road, Chaoyang District, Beijing
IGBT module FZ1000R33HL3
IGBT module FZ1000R33HE3
IGBT module FZ1200R33HE3
IGBT module FZ1500R33HE3
IGBT moduleFZ1500R33HL3
IGBT module FZ1600R33HE4
IGBT module FZ1400R33HE4
IGBT moduleFZ2400R33HE4
IGBT moduleFF450R33T3E3
IGBT moduleFZ825R33HE4D
New product
Adopting 1200V SiC M1H chip
62mm half bridge module, maximum specification 1m Ω

62mm CoolSiC at 1200V ™ The MOSFET half bridge module is now available on the market. Due to the adoption of M1H chip technology, the module operates in VGS(th)、RDS(on)The performance in terms of drift and gate drive voltage window has been improved. These modules also offer pre coated thermal interface material (TIM) versions.
Related products:
1,2,6m Ω, 1200V 62mm Half Bridge Module
Product Features
Integrated diode, optimized thermal resistance
Highest moisture resistance performance
Reliability of gate oxide layer
Strong ability to resist cosmic rays
Compliant with RoHS standard requirements
applied value
Optimize according to harsh application conditions
Lower voltage overshoot
Minimum conduction loss
High speed switch with extremely low losses
Symmetric module design achieves symmetrical switching behavior of upper and lower bridge arms
Standard module packaging technology ensures reliability
Production on the 62mm high-yield production line
competitive advantage
Expand mature 62mm packaged products through silicon carbide to meet fast switching requirements and low loss applications.
The highest current density and strong moisture resistance
Application Areas
Energy Storage System
Electric vehicle charging
PV inverter
UPS
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