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Beijing Jingcheng Hongtai Technology Co., Ltd
Siemens IGBT Energy Card 6SL39120AM360AA0
NegotiableUpdate on 03/07
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Overview
Siemens IGBT energy card 6SL39120AM360AA0 $r $n Beijing Jingcheng Hongtai Technology Co., Ltd. sells IGBT modules; Controllable silicon module; Thyristor; Diode module; Rectifier bridge module; PLC module; capacitance; Inverter spare parts $r $n1700V IGBT Infineon FZ1500R33HL3_S2 $r $nGM150 GL150 inverter accessories
Product Details
Siemens IGBT Energy Card 6SL39120AM360AA0
GM150 GL150 frequency converter accessories
Beijing Jingcheng Hongtai Technology Co., Ltd. sells Infineon IGBT modules; Controllable silicon module; Rectifier bridge module; Diode module; Thyristor; Controllable silicon, capacitor, power supply, fan, sensor, IPM module; Semiconductor power module; Inverter accessories, driver board, control board, CUVC board
GM150 Siemens IGBT Energy Card 6SL39120AM360AA0
6SL3912-5AP36-0AA0 (6SL39125AP360AA0)
A PAIR OF IGBT-POWERCARDS FZ1200; WATER-COOLED FOR SINAMICS GM150/SM150 (IGBT) 4.16KV MAX 800A
Technology Empowers Industry to Accurately Control Energy - Siemens 6SL3912-5AP36-0AA0 IGBT Energy Card
Core strengths
German precision craftsmanshipUsing Siemens original IGBT modules, the gate (G) recognition accuracy is ensured through R × 1KQ level resistance detection, and the failure rate is 30% lower than the industry standard
Multi-scenario adaptationSupport SINAMICS GM150/SM150 medium voltage frequency converter system (3.3-4.16kV), air-cooled design meets the continuous operation requirements of heavy industry
Long term stabilityCompliant with RoHS environmental standards, the compact 20kg structure achieves 20000 hours of uninterrupted operation record
Application Cases
After adopting this model, a certain automation enterprise:
Reduce production line energy consumption by 18%
Equipment maintenance cycle extended to 2.5 times the original
Compatible with 6SL3912-0AP36-0AA0 and other series modules for flexible expansion
Service Guarantee
Beijing spot supply (minimum order quantity 1 piece)
Provide technical guidance for multimeter detection and 72 hour emergency response
Free replacement service within the three-year warranty period
6SL3912-0AM34-0AA0
6SL3912-0AM35-3AA0
6SL3912-0AM36-0AA0
6SL3912-0AM38-0AA0
6SL3912-0AN34-0AA0
6SL3912-0AN35-3AA0
6SL3912-0AN36-0AA0
6SL3912-0AN36-0AA2
6SL3912-0AN38-0AA0
6SL3912-0AP34-0AA0
6SL3912-0AP34-0BA0
6SL3912-0AP35-3AA0
6SL3912-0AP36-0AA0
6SL3912-0AP36-0BA0
6SL3912-0AP38-0AA0
6SL3912-0AS32-0AA0
6SL3912-0AS33-0AA0
6SL3912-0BM43-8AA0
6SL3912-0BM43-8BA0
6SL3912-0BM43-8CA0
6SL3912-0BN43-8AA0
6SL3912-0BN43-8BA0
6SL3912-0BN43-8CA0
6SL3912-0BP42-8AA0
6SL3912-0BP42-8BA0
6SL3912-0BP42-8CA0
6SL3912-0EM38-0AA0
6SL3912-0EM41-0AA0
6SL3912-0EM41-2AA0
6SL3912-0EP38-0AA0
6SL3912-0EP38-0AA2
6SL3912-0EP41-0AA0
6SL3912-0EP41-2AA0
6SL3912-0ES34-0AA0
6SL3912-0ES36-0AA0
6SL3912-5AM34-0AA0
6SL3912-5AM36-0AA0
6SL3912-5AM36-6AA0
6SL3912-5AM41-0AA0
6SL3912-5AN34-0AA0
6SL3912-5AN36-0AA0
6SL3912-5AN36-0AA2
6SL3912-5AN36-6AA0
6SL3912-5AN41-0AA0
6SL3912-5AP34-0AA0
6SL3912-5AP36-0AA0
6SL3912-5AP36-6AA0
6SL3912-5AP41-0AA0
6SL3912-5AS32-0AA0
6SL3912-5AS33-0AA0
6SL3912-5BM43-8AA0
6SL3912-5BM43-8BA0
6SL3912-5BM43-8CA0
6SL3912-5BN43-8AA0
6SL3912-5BN43-8BA0
6SL3912-5BN43-8CA0
6SL3912-5BP42-8AA0
6SL3912-5BP42-8BA0
6SL3912-5BP42-8CA0
6SL3912-5EM38-0AA0
6SL3912-5EM41-0AA0
6SL3912-5EM41-2AA0
6SL3912-5EP38-0AA0
6SL3912-5EP38-0AA2
6SL3912-5EP41-0AA0
6SL3912-5EP41-2AA0
6SL3912-5ES34-0AA0
6SL3912-5ES36-0AA0
6SY8101-0AA04
6SY8101-0AA30
6SY8101-0AA54
6SY8101-0AA55
6SY8101-0AA57
6SY8101-0AB05
6SY8101-0AB12
6SY8101-0AB47
6SY8101-0AB48
6SY8101-0AB50
6SY8101-0AB55
6SY8101-0AB58
6SY8101-0AC00
6SY8102-0LB00
6SY8102-0LB01
6SY8102-0LC00
6SY8102-0LC01
6SY8102-0LD00
6SY8102-0LD01
Product Parameters:
IHM B 1700 V 2400A 190 mm single switch IGBT module, equipped with fourth generation trench gate/field termination IGBT,
IHV B 3300 V1000 A 130 mm single switchIGBT moduleWith the third-generation TRENCHSTOP ™ IGBT、 Low switching loss and emitter control diode - a solution suitable for traction and industrial applications
3300V IGBT module model:
FZ1000R33HL3_S2
FZ1500R33HL3_S2
FF200R33KF2C
FZ400R33KF2C
FZ800R33KF2C
FZ1200R33KF2C
IGBT module FZ1000R33HL3
IGBT module FZ1000R33HE3
IGBT module FZ1200R33HE3
IGBT module FZ1500R33HE3
IGBT module FZ1500R33HL3
IGBT module FZ1600R33HE4
IGBT module FZ1400R33HE4
IGBT module FZ2400R33HE4
IGBT module FF450R33T3E3
IGBT module FZ825R33HE4D
How to calculate the working junction temperature Tvj of IGBT devices?
ChatGPT says this:
To calculate the operating junction temperature T of IGBT devicesvjThe following factors need to be considered:
1 |
The power loss of IGBT chips. This value can be found in the datasheet provided by the IGBT chip manufacturer. Generally speaking, the greater the power loss, the higher the operating junction temperature. |
2 |
The packaging method of IGBT chips. Different packaging methods can affect heat dissipation efficiency. Generally speaking, the packaging method with a heat sink on the back has better heat dissipation effect. |
3 |
The heat dissipation capacity of the external radiator. The heat dissipation capacity of external radiators can also affect the working junction temperature. The size, material, and ventilation of the radiator can all affect the heat dissipation effect. |
If the above factors are taken into account, the operating junction temperature T of IGBT devices can be calculated using the following formulavj：
Tvj= Ta+ Pd*Rthjc
Among them, TaIt's the ambient temperature, PdIt is the power loss of IGBT chips, RthjcIt is the thermal resistance at the junction of the chip and the heat sink.
It should be noted that this formula only considers the heat dissipation of the IGBT chip itself and does not take into account the heat dissipation capacity of the entire system. Therefore, in practical applications, it is necessary to determine the operating junction temperature of IGBT devices based on specific system conditions.
1700V IGBT module model:
FZ1800R17KF4
FZ1200R17KF6C_B2
FZ1600R17KF6C_B2
FZ2400R17KF6C_B2
FZ1200R17KF4
FZ1200R17HE4
| FZ1200R17HP4_B2 FZ1600R17HP4_B2 FZ1600R17HP4_B21 FZ1800R17HP4_B29 FZ2400R17HP4_B2 FZ2400R17HP4_B28 FZ2400R17HP4_B29 FZ3600R17HP4_B2 |
|
FZ1200R17HP4 FZ1600R17HP4 FZ1800R17HP4_B9 FZ2400R17HP4 FZ2400R17HP4_B9 FZ3600R17HP4 IGBT4 Fast (IHM B)1) FZ1200R17HE4 FZ1800R17HE4_B9 FZ2400R17HE4_B9 FZ3600R17HE4 |
Feature Description
Product Specifications
IGBT Type: Trench Field Cut off
Configuration: Half bridge
Voltage emitter breakdown: 1700 V
Current collector (Ic): 2400 A
Current collector cutoff: 100 µ A
Input capacitance (Cies) at different Vce: 122 nF @ 25 V
Input: Standard
NTC thermistor: None
Working temperature: -40 ° C~175 ° C (TJ)
Installation type: Base installation
Encapsulation/Shell: Module
Supplier Device Packaging: AG-62MM
Product features:
high power density
VCE, SAT
Tvj op=175 ° C overload
High creepage distance and electrical clearance
Compliant with RoHS standards
4 kV AC 1-minute insulation
CTI>400 packaging
Obtained UL/CSA certification through UL1557 E8333
TRENCHSTOP ™ IGBT7 chip
improved EconoDUAL ™ 3 packages
225, 750, and 900 A，1700V Half bridge module
The diode, 750 A IGBT Equipped with 1200 A Diode (only) FF750R17ME7D_B11）
Under overload conditions, the working junction temperature can reach 175 ° C C
Crimp type control pin
IGBT module 6SL39125AP360AA0
Advantage:
Existing packages with high current capability allow for increased inverter output power within the same frame size
high power density
Avoid parallel connection of IGBT modules
Reduce system costs by simplifying the inverter system
flexibility
High reliability
Product application areas:
Uninterruptible Power Supply (UPS)
Energy Storage System
Motor control and drive
Commercial, Construction, and Agricultural Vehicles (CAV)
frequency converter
Beijing Jingcheng Hongtai Technology Co., Ltd. is an industrial chain supplier of power electronics semiconductor sales and power electronics industry solutions that integrates channels, distribution, direct sales, and OEM models.
Sell domestic and foreign brand power electronic semiconductor devices, frequency converters, frequency converter accessories, aluminum electrolytic capacitors, and power modules; We mainly distribute Infineon and EUPEC in Germany
Siemens, Semikron, IXYS, AEG, Vishay, Danfoss, TYCO, DYNEX, Vacon, Mitsubishi, Mitsubishi
Fuji, Fairchild Semiconductor, TOSHIBA Toshiba, HITACHI Hitachi, SanRex, Sanken POWEREX, Nidec, IR in the United States, ABB in Switzerland, POWERSEM, NELL Neil; Yaskawa Yaskawa;
IGBT, IGCT, IPM, PIM, thyristor, GTO, GTR Darlington, rectifier bridge, diode, field-effect module produced by companies such as Sigma in the UK and CATELEC in Spain; Fuji, Japan
HINODE, FERRAZ from France, GOOLD from the UK, and BUSSMANN from the US are fast acting fuses; KEMET， Arcotronics (AV) from Italy,
Itelcond, FACON from Italy, ELECTRONICON from Germany, TPC from France, Hitachi from Japan, NIPPON chemi con from Black Diamond, Nichicon from Negi;
Ruby, EPCOS Apcos, Swedish RIFA Lifa, British BHC, BHC Aerovox electrolytic capacitors, and American CDE non inductive capacitors; Swiss Concept IGBT driver, optocoupler, inverter main control board, driver board, power board, communication board, interface board
control panel
IGBT module 6SL39125AP360AA0
What is IGBT?
IGBT, also known as Insulated Gate Bipolar Transistor, is a composite fully controlled voltage driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor). It combines the advantages of MOSFET's high input impedance and GTR's low conduction voltage drop. GTR saturation voltage decreases, current density increases, but driving current is higher; MOSFET has a low driving power and fast switching speed, but it has a large conduction voltage drop and low current density. IGBT combines the advantages of both devices, with low driving power and reduced saturation voltage. Very suitable for applications in converter systems with DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives, and other fields.
Comparison between IGBT and MOSFET
MOSFET stands for Power Field Effect Transistor. Its three poles are the source (S), drain (D), and gate (G).
advantageGood thermal stability and a large safe working area.
Disadvantages: Low breakdown voltage and low operating current.Beijing Jingcheng Hongtai Technology Co., Ltd. Siemens IGBT Energy Card 6SL39120AM360AA0
IGBT, also known as Insulated Gate Bipolar Transistor, is a product of combining MOSFET and GTR (Power Transistor). Its three poles are the collector (C), emitter (E), and gate (G).
Features: The breakdown voltage can reach 1200V, and the collector saturation current has exceeded 1500A. The capacity of the inverter using IGBT as the inverter device is over 250kVA, and the operating frequency can reach 20kHz.
Typical Applications of IGBT
electric motor
Uninterruptible Power Supply
Installation of solar panels
welding machine
Power converter and inverter
Inductive charger
induction cooker
